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  Datasheet File OCR Text:
 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diode
B5817W
FEATURES Power dissipation PD : 450 mW Tamb=25ae(c) Collector current IF : 1 A Collector-base voltage VR : 20 V Operating and storage junction temperature range T J T stg: -55aeto +150ae Unit mm
SCHOTTKY BARRIER DIODE
SO D - 1 23
MARKING SJ
ELECTRICAL CHARACTERISTICS Tamb=25ae
unless
otherwise
specified(c)
Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance
Symbol V(BR) IR VF CD
Test IR= 1mA VR=20V IF=1A IF=3A VR=4V
conditions
MIN 20
MAX
UNIT V
1 0.45 0.75 f=1MHz 120
mA V pF
SOD-123 PACKAGE OUTLINE DIMENSIONS
E
A1
A2
b
E1
A
L 0.20
L1
|E
Symbol A A1 A2 b c D E E1 L L1 |E
Dimensions In Millimeters Min 1.050 0.000 1.050 0.450 0.080 1.500 2.600 3.550 0.500REF 0.250 0 0.450 8 Max 1.250 0.100 1.150 0.650 0.150 1.700 2.800 3.850 Min
c
Dimensions In Inches Max 0.049 0.004 0.045 0.026 0.006 0.067 0.110 0.152 0.020REF 0.010 0 0.018 8 0.041 0.000 0.041 0.018 0.003 0.059 0.102 0.140
D


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